Gallium Nitride (GaN) GaN structures are found in a variety of photonic devices including photo detector, lasers, and LED's. Typically these structures are patterned with a thick coat of photoresist, or a thin metal mask, and the etched surface and sidewalls should be extremely smooth.
Fabrication of nanorod InGaN/GaN MQWs using ICP etching After the Ni nano-island masks formed on GaN surface have been systematically investigated, ICP etching is used to fabricate nanorod InGaN/GaN MQWs with the mask, since metal Ni have a good selective etching rate to GaN-based materials  .
Gallium Nitride Wafers PAM-XIAMEN crystal growth co.,ltd a leading manufacture of Nitride semiconductor wafers, it has established the manufacturing technology for key products of GaN epitaxy on Sapphire and freestanding GaN wafer substrate which is for UHB-LED and LD.
phys. stat. sol. (c) 1, No. 10, 25732576 (2004) / DOI 10.1002/pssc.200405065 . 2004 WILEY-VCH Verlag & Co. KGaA, Weinheim . Batch reactive ion etching of gallium nitride using photoresist as a mask Mark Dineen*, Sean Lee**, Ligang Deng, Andrew L. Goodyear, and Colin Welch Oxford Instruments Plasma Technology, North End, Yatton, Bristol, UK
With these processes, Cree offers numerous foundry service options to facilitate the rapid development of custom circuits, including full and dedicated mask sets. The G40V4 process has been qualified at both 28V and 40V operation with RF power densities up to 6W/mm of FET periphery with operation up to 18GHz. The G50V3 process has been qualified for 50V operation and RF power densities up to ...
of such gallium nitride platform on silicon has been reported recently.10 The investigated structures were composed of suspended ridge-access waveguides and two-dimensional photonic crystals. Quality factors up to 5400 for double het-erostructure cavities at 1611nm with in-line coupling were demonstrated with this platform.11 It is worth noting that very high quality factors up to 148000 at ...
Apart from optoelectronics, gallium nitride are causing a stir in the electronics department. First GaN transistors are shown to be magnitudes more powerful than transistors based on silicon and gallium arsenide. Because of their large band gap, more voltage can be applied while yielding a high current.
Monocrystalline GaN and AlxGa1-xN films have been grown via the pendeo-epitaxy (PE)(1) technique with and without Si3N4 masks on GaN/AlN/6H-SiC(0 0 0 1) and GaN(0 0 0 1)/AlN(0 0 0 1)/3C-SiC(1 1 1)/Si(1 1 1) substrates using organometallic vapor phase deposition.
Gallium nitride islands are preferentially formed in the surface undulations beyond a critical thickness of about 1–1.5 nm. The surface is roughest for a GaN layer thickness of ~5 nm; it becomes progressively smoother during island coalescence, which is largely finished after ~10 nm of GaN. In contrast, it takes several hundred nanometers to smooth out the pits and undulations.